au.\*:("Institute of Electrical Engineers")
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Industrial power system disturbances, symposium proceedings, Pretoria, September 22-23, 1983; Industriële kragstelselsteurings = Les perturbations dans les réseaux industriels Pretoria 22-23 sept., 1983Industrial power system disturbances. Symposium. 1983, pagination multConference Proceedings
IOOC '83: technical digest/4th International conference on integrated optics and optical fiber communication, Tokyo, June 27-30, 1983International conference on integrated optics and optical fiber communication. 4. 1983, 1Vol, +2 fasc., XIV-459 p., IV-43 p., IV-75 p, isbn 4-930813-01-8Conference Proceedings
IEEE/ PES transmission and distribution conference and exhibition 2002 : Asia Pacific (new wave of T&D technology from Asia Pacific)IEEE / PES transmission and distribution conference. 2002, isbn 0-7803-7525-4, 3Vol, 2377 p., isbn 0-7803-7525-4Conference Proceedings
ISPSD '02 : 14th international symposium on power semiconductor devices & ICS (Santa FE NM, 4-7 June 2002)International symposium on power semiconductor devices & ICS. 2002, isbn 0-7803-7318-9, XX, 311 p, isbn 0-7803-7318-9Conference Proceedings
Proceedings/5th meeting on ferroelectric materials and their applications (FMA-5), Kyoto, May 29-31, 1985Japanese journal of applied physics. 1985, Vol 24, issn 0021-4922, 214 p., suppl. 3Conference Proceedings
10kV power semiconductors - breakthrough for 6.9 kV medium voltage drivesWEBER, A; EICHER, S.International symposium on power semiconductor devices & ICS. 2002, pp 45-48, isbn 0-7803-7318-9, 4 p.Conference Paper
Ultra high switching speed 600 V thin wafer PT-IGBT based on new turn-off mechanismMATSUDAI, Tomoko; NAKAGAWA, Akio.International symposium on power semiconductor devices & ICS. 2002, pp 285-288, isbn 0-7803-7318-9, 4 p.Conference Paper
Modern applications of power electronics to marine propulsion systemsHODGE, C. G.International symposium on power semiconductor devices & ICS. 2002, pp 9-16, isbn 0-7803-7318-9, 8 p.Conference Paper
10 kV IGBT Press Pack modules with series connected chipsKAUFMANN, Stefan; ZWICK, Fabian.International symposium on power semiconductor devices & ICS. 2002, pp 89-92, isbn 0-7803-7318-9, 4 p.Conference Paper
Lateral 10-15V DMOST with very low 6 mOhm.mm2 on-resistanceLUDIKHUIZE, Adriaan W.International symposium on power semiconductor devices & ICS. 2002, pp 301-304, isbn 0-7803-7318-9, 4 p.Conference Paper
ISPSD 93 : proceedings of the 5th international symposium on power semiconductor devices and ICs (Monterey CA, May 18-20, 1993)Williams, Richard K; Baliga, B. Jayant.International symposium on power semiconductor devices and ICs. 1993, isbn 0-7803-1314-3, XVIII, 324 p, isbn 0-7803-1314-3Conference Proceedings
Proceedings/3rd international conference on power electronics and variable-speed drives, 13-15 July 1988, London, GBRHUGHES, A.IEE conference publication. 1988, Num 291, issn 0537-9989, XIV-474 pConference Proceedings
Proceedings/6th. Meeting on ferroelectric materials and their applications (FMA6), Kyoto, June 3-5, 1987MARUTAKE, M.Japanese journal of applied physics. 1986, Vol 26, issn 0021-4922, 222 p., suppl. 2Conference Proceedings
ISPSD 91 : proceedings of the 3rd international symposium on power semiconductor devices and ICs, Baltimore MD, April 22-24, 1991Shibib, Ayman M; Baliga, Jayant B.International symposium on power semiconductor devices and ICs. 1991, isbn 0-7803-0009-2, VIII, 260 p, isbn 0-7803-0009-2Conference Proceedings
Dynamics of maximum Junction temperature of power MOSFETsCHUNG, Young S; BAIRD, Bob.International symposium on power semiconductor devices & ICS. 2002, pp 145-148, isbn 0-7803-7318-9, 4 p.Conference Paper
IGBT Driver chipset for high power applicationsHERZER, R; PAWEL, S; LEHMANN, J et al.International symposium on power semiconductor devices & ICS. 2002, pp 161-164, isbn 0-7803-7318-9, 4 p.Conference Paper
Break-through of the Si limit under 300V breakdown voltage with new concept power device: super 3D MOSFETSAKAKIBARA, Jun; SUZUKI, Naohiro; YAMAGUCHI, Hitoshi et al.International symposium on power semiconductor devices & ICS. 2002, pp 233-236, isbn 0-7803-7318-9, 4 p.Conference Paper
Conductivity modulation improvement in 6.5kV trench UMOS Insulated Gate bipolar transistorsNATARAJAN, R; CHOW, T. P.International symposium on power semiconductor devices & ICS. 2002, pp 121-124, isbn 0-7803-7318-9, 4 p.Conference Paper
4H-SiC npn bipolar junction transistors with BVCEO > 3,200 VHUANG, Chih-Fang; COOPER, James A.International symposium on power semiconductor devices & ICS. 2002, pp 57-60, isbn 0-7803-7318-9, 4 p.Conference Paper
750 A, 75 V MOSFET power module with sub-nH inductanceMOURICK, P; STEGER, J; TURSKY, W et al.International symposium on power semiconductor devices & ICS. 2002, pp 109-112, isbn 0-7803-7318-9, 4 p.Conference Paper
Proceedings/2nd. International conference on power electronics and variable-speed drives, Birmingham, U.K., 24-26 November 1986IEE conference publication. 1986, Num 264, issn 0537-9989, X-252 pConference Proceedings
Investigations on the stability of dynamic avalanche in IGBTsROSE, Petra; SILBER, Dieter; PORST, Alfred et al.International symposium on power semiconductor devices & ICS. 2002, pp 165-168, isbn 0-7803-7318-9, 4 p.Conference Paper
Guard ring assisted RESURF: A new termination structure providing stable and high breakdown voltage for SiC power devicesKINOSHITA, Kozo; HATAKEYAMA, Tetsuo; TAKIKAWA, Osamu et al.International symposium on power semiconductor devices & ICS. 2002, pp 253-256, isbn 0-7803-7318-9, 4 p.Conference Paper
Defect-less trench filling of epitaxial Si growth by H2 annealingYAMAUCHI, Shoichi; URAKAMI, Yasushi; TUJI, Nobuhiro et al.International symposium on power semiconductor devices & ICS. 2002, pp 133-136, isbn 0-7803-7318-9, 4 p.Conference Paper
Analytical model for thermal instability of low voltage power MOS and S.O.A. in pulse operationSPIRITO, P; BREGLIO, G; D'ALESSANDRO, V et al.International symposium on power semiconductor devices & ICS. 2002, pp 269-272, isbn 0-7803-7318-9, 4 p.Conference Paper